IRF7379TRPBF International Rectifier, IRF7379TRPBF Datasheet - Page 2
IRF7379TRPBF
Manufacturer Part Number
IRF7379TRPBF
Description
MOSFET N+P 30V 4.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7379TRPBF.pdf
(10 pages)
Specifications of IRF7379TRPBF
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A, 4.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
75 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.8 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
16.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7379PBFTR
IRF7379TRPBF
IRF7379TRPBFTR
IRF7379TRPBF
IRF7379TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7379TRPBF
Manufacturer:
IR
Quantity:
20 000
t
Notes:
d(on)
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
L
L
C
C
C
I
I
V
t
Q
r
d(off)
DSS
GSS
f
rr
S
SM
fs
D
S
(BR)DSS
DS(ON)
GS(th)
g
gd
iss
oss
rss
gs
SD
rr
Repetitive rating; pulse width limited by
N-Channel I
P-Channel I
(BR)DSS
2
max. junction temperature. ( See fig. 10 )
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductace
Internal Source Inductance
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SD
SD
≤ 2.4A, di/dt ≤ 73A/µs, V
≤ -1.8A, di/dt ≤ 90A/µs, V
Parameter
Parameter
DD
DD
J
≤ V
≤ V
(BR)DSS
(BR)DSS
N-Ch
P-Ch
N-Ch 30
P-Ch -30
N-Ch
P-Ch
N-Ch 1.0
P-Ch -1.0
N-Ch 5.2
P-Ch 2.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
, T
N-P
N-P
N-P
, T
J
J
≤ 150°C
≤ 150°C
Min. Typ. Max. Units
Min. Typ. Max. Units
––
— 0.032 —
— -0.037 —
— 0.038 0.045
— 0.055 0.075
— 0.070 0.090
— 0.130 0.180
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
520
440
180
200
6.8
7.7
4.0
6.0
—
—
—
—
—
—
—
—
—
—
— ±100
—
—
—
—
—
—
11
21
17
22
25
18
72
93
—
—
—
—
—
—
47
53
56
66
-1.0
1.0
-25
2.9
2.9
7.9
9.0
-3.1
-1.0
3.1
-34
1.0
—
—
—
—
—
—
25
25
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
46
71
80
84
99
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board,
Ω
N-Channel
V
R
P-Channel
V
R
N-Channel
V
P-Channel
V
V
V
Reference to 25°C, I
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
V
N-Channel
I
P-Channel
I
Between lead, 6mm (0.25in.) from
package and center of die contact
T
T
N-Channel
T
P-Channel
T
D
D
DD
DD
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
D
D
J
J
J
J
= 2.4A, V
= -1.8A, V
= 25°C, I
= 25°C, I
= 6.2Ω
= 8.2Ω
= 25°C, I
= 25°C, I
= 0V, I
= V
= V
= 15V, I
= -24V, I
= 24 V, V
= -24V, V
= 24 V, V
= -24V, V
= ± 20V
= 15V, I
= -15V, I
= 0V, V
= 0V, V
= 0V, I
= 10V, I
= 4.5V, I
= -10V, I
= -4.5V, I
GS
GS
, I
, I
D
D
DS
DS
DS
D
D
D
D
F
F
D
DS
= 250µA
S
S
= -250µA
D
D
D
D
GS
GS
D
GS
GS
= 2.4A, di/dt = 100A/µs
= -1.8A, di/dt = -100A/µs
= 5.8A
= 250µA
= -250µA
= 2.4A
= 2.4A, R
= 1.8A, V
= -1.8A, V
= -25V, ƒ = 1.0MHz
Conditions
= 4.9A
= 24V, V
= -1.8A, R
= 25V, ƒ = 1.0MHz
=- 4.3A
= -1.8A
= -24V, V
=- 3.7A
= 0V
= 0V, T
= 0V
= 0V, T
D
D
Conditions
= 1mA
= -1mA
GS
G
GS
J
J
GS
www.irf.com
GS
G
= 125°C
= 125°C
= 6.0Ω,
= 10V
= 6.0Ω
= 0V
= 0V
= -10V
≤ 10sec.