IRF7379TRPBF International Rectifier, IRF7379TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7379TRPBF
• Description: MOSFET N+P 30V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7379TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 75 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 16.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7379PBFTR; IRF7379TRPBF; IRF7379TRPBFTR

4
2.0
1.5
1.0
0.5
0.0
-60
Fig 5. Normalized On-Resistance
I
D
-40
= 4.0A
T , Junction Temperature (°C)
-20
J
Vs. Temperature
0
20
40
60
0.08
0.07
0.06
0.05
0.04
0.03
Fig 7. Typical On-Resistance Vs. Gate
80
0
100 120 140 160
V
V
GS
GS
= 10V
4
, Gate-to-Source Voltage (V)
Voltage
A
8
0.20
0.16
0.12
0.08
0.04
0.00
ID = 5.8A
Fig 6. Typical On-Resistance Vs. Drain
2
12
4
I
D
16
, Drain Current (A)
Current
6
VGS = 4.5V
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VGS = 10V
8
10