IRF7379TRPBF International Rectifier, IRF7379TRPBF Datasheet

IRF7379TRPBF

Manufacturer Part Number

IRF7379TRPBF

Description

MOSFET N+P 30V 4.3A 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7379TRPBF.pdf (10 pages)

Specifications of IRF7379TRPBF

Fet Type

N and P-Channel

Fet Feature

Standard

Rds On (max) @ Id, Vgs

45 mOhm @ 5.8A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

5.8A, 4.3A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

25nC @ 10V

Input Capacitance (ciss) @ Vds

520pF @ 25V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

75 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

5.8 A

Power Dissipation

2.5 W

Mounting Style

SMD/SMT

Gate Charge Qg

16.7 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7379PBFTR
IRF7379TRPBF
IRF7379TRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7379TRPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
Download datasheet (220Kb)

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Thermal Resistance Ratings

Absolute Maximum Ratings

www.irf.com

dv/dt

@ T

θJA

Complimentary Half Bridge

Generation V Technology

Surface Mount

Fully Avalanche Rated

Lead-Free

Ultra Low On-Resistance

STG

= 70°C

= 25°C

Drain-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ‚

Junction and Storage Temperature Range

Parameter

Maximum Junction-to-Ambient„

@ 10V

N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top View

N-Channel

5.8

4.6

5.0

HEXFET

IRF7379PbF

-55 to + 150

Max.

0.02

± 20

2.5

Max.

SO-8

DS(on)

DSS

Power MOSFET

P-Channel

0.045Ω 0.090Ω

-4.3

-3.4

-5.0

-30

-34

N-Ch

30V

-30V

P-Ch

Units

°C/W

W/°C

V/ns

°C

10/7/04

Related parts for IRF7379TRPBF

IRF7379TRPBF Summary of contents

Page 1

... Fully Avalanche Rated l Lead-Free l Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q Total ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...

Page 4

I = 4.0A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.08 0.07 0.06 0.05 0.04 0.03 0 Fig 7. Typical On-Resistance ...

Page 5

1MHz iss rss oss ds gd 800 C iss 600 C oss 400 C 200 ...

Page 6

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 10 -4.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig ...

Page 7

I = -3.0A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 15. Normalized On-Resistance Vs. Temperature 0.16 0.14 0.12 0.10 0.08 0.06 0 Fig 17. Typical On-Resistance Vs. ...

Page 8

1MHz iss rss 800 oss ds gd 600 C iss C oss 400 C rss ...

Page 9

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010] NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ...

Page 10

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

Related keywords

irf730
irf734
irf7379
irf737
irf7316
irf7303
irf7389
irf7342
irf7341
irf7309
irf7343
IRF7379TRPBF datasheet
IRF7379TRPBF data sheet
IRF7379TRPBF pdf datasheet
IRF7379TRPBF component
IRF7379TRPBF part
IRF7379TRPBF distributor
IRF7379TRPBF RoHS
IRF7379TRPBF datasheet download