IRF7379TRPBF International Rectifier, IRF7379TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7379TRPBF
• Description: MOSFET N+P 30V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7379TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 75 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 16.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7379PBFTR; IRF7379TRPBF; IRF7379TRPBFTR

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100
0.1
1000
10
0.00001
800
600
400
200
1
0
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 8. Typical Capacitance Vs.
V
DS
C
C
C
rss
iss
oss
V
C
C
C
(THERMAL RESPONSE)
, Drain-to-Source Voltage (V)
0.0001
Drain-to-Source Voltage
GS
iss
rss
oss
SINGLE PULSE
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
0.001
, C
ds
t , Rectangular Pulse Duration (sec)
SHORTED
1
0.01
100
A
20
16
12
8
4
0
0.1
0
I
V
D
DS
Fig 9. Typical Gate Charge Vs.
= 2.4A
= 24V
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
5
G
Gate-to-Source Voltage
1
J
10
DM
x Z
1
thJA
FOR TEST CIRCUIT
P
2
15
DM
SEE FIGURE 11
+ T
10
A
t
1
t
20
2
100
5
25
A