IRF7379TRPBF International Rectifier, IRF7379TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7379TRPBF
• Description: MOSFET N+P 30V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7379TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 75 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 16.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7379PBFTR; IRF7379TRPBF; IRF7379TRPBFTR

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1000
100
100
10
10
1
0.1
Fig 3. Typical Transfer Characteristics
4
Fig 1. Typical Output Characteristics
TOP
BOTTOM 4.5V
V
V
DS
5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25°C
J
1
6
7
T = 150°C
20µs PULSE WIDTH
T = 25°C
J
V
20µs PULSE WIDTH
J
4.5V
DS
10
= 15V
8
9
100
10
A
A
1000
100
100
10
0.1
10
1
1
0.1
0.0
Fig 2. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
TOP
BOTTOM 4.5V
V
T = 150°C
V
J
DS
15V
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
SD
0.5
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
Forward Voltage
1
1.0
T = 25°C
J
20µs PULSE WIDTH
T = 150°C
J
1.5
4.5V
10
2.0
V
GS
= 0V
100
3
2.5
A
A