SI1563EDH-T1-E3 Vishay, SI1563EDH-T1-E3 Datasheet
SI1563EDH-T1-E3
Specifications of SI1563EDH-T1-E3
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SI1563EDH-T1-E3 Summary of contents
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... Top View Ordering Information: Si1563EDH-T1-E3 (Lead (Pb)-free) Si1563EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si1563EDH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... Drain Current (A) D On-Resistance vs. Drain Current Document Number: 71416 S10-1054-Rev. D, 03-May-10 10 000 1000 100 0.01 0.001 140 120 100 1.5 2.0 Si1563EDH Vishay Siliconix 150 ° ° Gate-to-Source Voltage (V) GS Gate-Current vs. Gate-Source Voltage 2 ° °C 1.5 1.0 0.5 ...
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... Si1563EDH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1. 0.0 0.3 0 Total Gate Charge (nC) g Gate Charge 150 ° 0.1 0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0 100 µA 0.1 D 0.0 - 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.9 1.2 1 ...
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... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 71416 S10-1054-Rev. D, 03-May- Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1563EDH Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 170 °C/W thJA ( thJA 4 ...
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... Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Gate-to-Source Voltage (V) GS Gate-Current vs. Gate-Source Voltage 3 thru 3 2.5 2.0 1.5 1.0 0.5 0 Drain-to-Source Voltage (V) DS Output Characteristics 0.8 0.4 0.0 0.0 0.5 1.0 1 Drain Current (A) D On-Resistance vs. Drain Current www ...
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... T - Temperature (°C) J Threshold Voltage Document Number: 71416 S10-1054-Rev. D, 03-May-10 1.0 1.2 1 °C J 0.8 1.0 1 100 µ 100 125 150 Si1563EDH Vishay Siliconix 1.4 1.2 1.0 0.8 0 100 T - Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1 0.8 0.4 0 Gate-to-Source Voltage (V) GS On-Resistance vs ...
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... Si1563EDH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...