SI1563EDH-T1-E3 Vishay, SI1563EDH-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI1563EDH-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1563EDH-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.13A, 880mA
• Vgs(th) (max) @ Id: 450mV @ 100µA
• Gate Charge (qg) @ Vgs: 1nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.28 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.13 A @ N Channel or 0.88 A @ P Channel
• Power Dissipation: 570 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.13A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1563EDH-T1-E3TR

Si1563EDH
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
V
GS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.2
0.8
0.4
0.0
= 5 V thru 3.5 V
8
6
4
2
0
0.0
0
0
Gate-Current vs. Gate-Source Voltage
0.5
On-Resistance vs. Drain Current
V
V
GS
1
DS
4
Output Characteristics
V
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.0
GS
V
I
D
GS
- Drain Current (A)
= 1.8 V
= 2.5 V
1.5
8
2
2.0
12
3
V
GS
1.5 V
2.5 V
2.5
= 4.5 V
2 V
1 V
3 V
3.0
16
4
10 000
0.001
1000
0.01
100
160
120
0.1
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
40
1
0
0.0
0
0
C
Gate-Current vs. Gate-Source Voltage
T
0.5
rss
J
= 150 °C
4
3
V
V
V
GS
DS
Transfer Characteristics
GS
1.0
T
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
J
= 25 °C
Capacitance
6
8
1.5
S10-1054-Rev. D, 03-May-10
C
T
C
C
25 °C
oss
iss
Document Number: 71416
= - 55 °C
2.0
12
9
2.5
12
125 °C
16
3.0
15
3.5
20