SI1563EDH-T1-E3 Vishay, SI1563EDH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1563EDH-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1563EDH-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.13A, 880mA
• Vgs(th) (max) @ Id: 450mV @ 100µA
• Gate Charge (qg) @ Vgs: 1nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.28 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.13 A @ N Channel or 0.88 A @ P Channel
• Power Dissipation: 570 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.13A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1563EDH-T1-E3TR

Si1563EDH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
0.1
0.2
0.1
0.0
2
1
5
4
3
2
1
0
- 50
0.0
0
Source-Drain Diode Forward Voltage
- 25
V
I
D
DS
0.2
= 1.28 A
0.3
= 10 V
V
SD
0
Q
-
Threshold Voltage
g
I
T
0.4
D
S
- Total Gate Charge (nC)
J
o
= 100 µA
25
Gate Charge
- Temperature (°C)
u
T
0.6
c r
J
e
= 150 °C
t -
- o
0.6
50
D
a r
n i
0.9
75
V
o
0.8
a t l
T
g
100
J
e
= 25 °C
(
) V
1.2
1.0
125
150
1.5
1.2
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0.01
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
Single Pulse Power, Junction-to-Ambient
- 25
V
I
D
GS
= 1.13 A
1
0.1
= 4.5 V
V
GS
0
T
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
2
1
Time (s)
S10-1054-Rev. D, 03-May-10
50
Document Number: 71416
I
D
3
= 1.13 A
75
10
100
4
100
125
150
6
5
0
0