SI1563EDH-T1-E3 Vishay, SI1563EDH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1563EDH-T1-E3
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1563EDH-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.13A, 880mA
• Vgs(th) (max) @ Id: 450mV @ 100µA
• Gate Charge (qg) @ Vgs: 1nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.28 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.13 A @ N Channel or 0.88 A @ P Channel
• Power Dissipation: 570 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.13A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 220mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1563EDH-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71416
S10-1054-Rev. D, 03-May-10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
0.0
0
0
Gate-Current vs. Gate-Source Voltage
V
On-Resistance vs. Drain Current
GS
V
= 1.8 V
V
0.5
DS
GS
4
V
1
Output Characteristics
GS
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
I
D
= 5 V thru 2 V
- Drain Current (A)
1.0
8
2
V
GS
= 2.5 V
1.5
12
3
V
GS
= 4.5 V
1.5 V
1 V
2.0
16
4
10 000
0.001
1000
0.01
100
140
120
100
0.1
2.0
1.5
1.0
0.5
0.0
10
80
60
40
20
1
0
0.0
0
0
C
T
Gate-Current vs. Gate-Source Voltage
rss
J
= 150 °C
4
3
V
V
V
0.5
DS
GS
Transfer Characteristics
GS
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
- Gate-to-Source Voltage (V)
Capacitance
T
8
6
J
= 25 °C
1.0
Vishay Siliconix
T
12
25 °C
Si1563EDH
C
9
= - 55 °C
C
iss
1.5
www.vishay.com
16
12
125 °C
2.0
20
15
3