SI1563EDH Vishay Siliconix, SI1563EDH Datasheet

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SI1563EDH

Manufacturer Part Number
SI1563EDH
Description
Complementary 20-V (D-S) Low-Threshold MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 71416
S-03943—Rev. B, 21-May-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
G
D
S
Surface Mounted on 1” x 1” FR4 Board.
1
1
2
N-Channel
P-Channel
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
Complementary 20-V (D-S) Low-Threshold MOSFET
Parameter
V
DS
J
a
–20
20
= 150_C)
6
5
4
a
(V)
Parameter
D
G
S
_
2
1
2
a
0.490 @ V
0.750 @ V
0.280 @ V
0.360 @ V
0.450 @ V
1.10 @ V
a
Marking Code
r
DS(on)
EA
T
T
T
T
A
A
A
A
GS
= 25_C
= 85_C
= 25_C
= 85_C
GS
GS
GS
GS
GS
XX
Part # Code
= –1.8 V
(W)
= –4.5 V
= –2.5 V
= 4.5 V
= 2.5 V
= 1.8 V
Lot Traceability
and Date Code
Symbol
Steady State
Steady State
T
t v 5 sec
New Product
V
J
V
I
P
, T
DM
I
I
GS
DS
D
S
D
_
stg
I
–1.00
–0.81
–0.67
D
1.28
1.13
1.00
(A)
5 secs
1.28
0.92
0.61
0.74
0.38
G
1
Symbol
N-Channel
R
R
thJA
thJF
"12
4.0
20
Steady State
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 2000 V
D Thermally Enhanced SC-70 Package
D Load Switching
D PA Switch
D Level Switch
1 kW
N-Channel
1.13
0.81
0.48
0.57
0.30
Typical
–55 to 150
130
170
80
D
S
1
1
5 secs
–1.00
–0.72
–0.61
0.30
0.16
G
2
Maximum
P-Channel
Vishay Siliconix
170
220
100
"12
–3.0
–20
Steady State
Si1563EDH
3 kW
–0.88
–0.63
–0.48
P-Channel
0.57
0.3
www.vishay.com
Unit
_C/W
C/W
Unit
_C
S
D
W
V
A
2
2
1

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SI1563EDH Summary of contents

Page 1

... 85_C 0. stg Symbol sec R thJA Steady State Steady State R thJF Si1563EDH Vishay Siliconix D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package D Load Switching D PA Switch D Level Switch N-Channel P-Channel S 1 P-Channel ...

Page 2

... Si1563EDH Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

... I – Drain Current (A) D Document Number: 71416 S-03943—Rev. B, 21-May-01 New Product 1.5 2.0 Si1563EDH Vishay Siliconix Gate Current vs. Gate-Source Voltage 10,000 1,000 100 150_C 25_C J 0.01 0.001 – Gate-to-Source Voltage (V) GS Transfer Characteristics 2 ...

Page 4

... Si1563EDH Vishay Siliconix Gate Charge 1. 0.0 0.3 0.6 Q – Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C J 1 0.1 0 0.2 0.4 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 = 100 0.1 –0.0 –0.1 –0.2 –0.3 –0.4 –50 – ...

Page 5

... Normalized Thermal Transient Impedance, Junction-to-Ambient –2 – Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot –3 – Square Wave Pulse Duration (sec Si1563EDH Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 170_C/W ...

Page 6

... Si1563EDH Vishay Siliconix Output Characteristics 3 thru 3 .5V GS 2.5 2.0 1.5 1.0 0.5 0 – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0.8 0.4 0.0 0.0 0.5 1.0 I – Drain Current (A) D Gate Charge 0.0 0.2 0.4 0.6 Q – Total Gate Charge (nC) g www.vishay.com ...

Page 7

... T = 25_C J 0.6 0.8 1.0 1 100 125 150 Normalized Thermal Transient Impedance, Junction-to-Ambient –2 – Square Wave Pulse Duration (sec) Si1563EDH Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 1 0.8 0.4 0 – Gate-to-Source Voltage (V) GS Single Pulse Power, Junction-to-Ambient ...

Page 8

... Si1563EDH Vishay Siliconix 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 10 www.vishay.com 8 New Product _ Normalized Thermal Transient Impedance, Junction-to-Foot –3 – Square Wave Pulse Duration (sec) – Document Number: 71416 S-03943—Rev. B, 21-May-01 10 ...

Page 9

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