SI1563EDH Vishay Siliconix, SI1563EDH Datasheet - Page 7

• Manufacturer Part Number: SI1563EDH
• Description: Complementary 20-V (D-S) Low-Threshold MOSFET
• Manufacturer: Vishay Siliconix

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Document Number: 71416
S-03943—Rev. B, 21-May-01
–0.00
–0.05
–0.10
–0.15
0.30
0.25
0.20
0.15
0.10
0.05
0.01
0.1
0.1
2
1
2
1
–50
10
0
–4
Duty Cycle = 0.5
0.2
0.1
0.05
–25
Source-Drain Diode Forward Voltage
Single Pulse
0.2
V
SD
0
– Source-to-Drain Voltage (V)
T
Threshold Voltage
I
0.02
D
J
10
T
0.4
= 100 mA
– Temperature (_C)
25
J
–3
= 150_C
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
100
–2
T
J
1.0
= 25_C
_
125
Square Wave Pulse Duration (sec)
1.2
150
New Product
10
–1
1
1.6
1.2
0.8
0.4
0.0
0.01
5
4
3
2
1
0
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
V
1
0.1
GS
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
– Gate-to-Source Voltage (V)
DM
JM
– T
t
2
Time (sec)
1
A
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
I
100
thJA
D
t
t
1
2
3
= 0.88 A
(t)
10
= 170_C/W
Si1563EDH
4
100
600
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600
5
7