IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7350TRPBF
• Description: MOSFET N/P-CH 100V 2.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7350TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.1A, 1.5A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
100
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
50
T , Case Temperature
C
Case Temperature

(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
( C)
°
125
t , Rectangular Pulse Duration (sec)
1
150
N-CHANNEL
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
0.1
DS
GS

t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D =
2. Peak T
G
Notes:
V
V
GS
GS
t
r
V
1
J
DS
= P
µs
DM
x Z
t / t
1

thJA
D.U.T.
IRF7350
P
2
t
DM
d(off)
+ T
R
10
D
A
t
1
t
f
t
2
+
-
V
5
DD
100