IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 8

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IRF7350TRPBF

Manufacturer Part Number
IRF7350TRPBF
Description
MOSFET N/P-CH 100V 2.1A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7350TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
N and P-Channel
Gate Charge (qg) @ Vgs
28nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.1A, 1.5A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 2.1A, 10V
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
2.1 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
19 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7350TRPBF
Manufacturer:
NS/TI
Quantity:
3
IRF7350
8
0.001
0.01
0.1
10
40
30
20
10
1
1.0E-06
0
Fig 20. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
0.05
0.10
0.01
1.0E-05
50
Vs. Temperature
TOP
BOTTOM 10% Duty Cycle
I D = 4.2A
75
1.0E-04
Fig 19. Typical Avalanche Current Vs.Pulsewidth
Single Pulse
100
1.0E-03
125
N-CHANNEL
1.0E-02
150
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
Purely a thermal phenomenon and failure occurs at a
t
not exceeded.
Figures 12a, 12b.
T
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
1.0E-01
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
1.0E+00
Allowed avalanche Current vs
avalanche
assuming
avalanche losses
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2 T/ [1.3·BV·Z
= P
1.0E+01
D (ave)
pulsewidth,
jmax
Tj = 25°C due to
av
av
. This is validated for
·f
) = T/ Z
·t
th
av
]
www.irf.com
1.0E+02
thJC
tav
jmax
1.0E+03
is

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