IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7350TRPBF
• Description: MOSFET N/P-CH 100V 2.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7350TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.1A, 1.5A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7350
Fig 12. Typical On-Resistance Vs. Gate
6
0.40
0.30
0.20
0.10
0.00
4.0
3.5
3.0
2.5
2.0
Fig 14. Typical Threshold Voltage Vs.
4.5
-75
-50
6.0
V GS, Gate -to -Source Voltage (V)
Junction Temperature
-25
I D = 250µA
Voltage
T J , Temperature ( °C )
7.5
0
9.0
I D = 2.1A
25
10.5
50
75
12.0
100
13.5
125
N-CHANNEL
15.0
150
Fig 13. Typical On-Resistance Vs. Drain
0.18
0.17
0.16
0.15
70
60
50
40
30
20
10
0
1.00
0
Fig 15. Typical Power Vs. Time
V GS = 10V
2
I D , Drain Current (A)
10.00
Current
Time (sec)
4
6
100.00
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8
1000.00
10