IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7350TRPBF
• Description: MOSFET N/P-CH 100V 2.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7350TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.1A, 1.5A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 17. Gate Charge Test Circuit
100
80
60
40
20
0
25
Fig 16a. Maximum Avalanche Energy
Starting T , Junction Temperature
12V
V
GS
Same Type as D.U.T.
50
Current Regulator
.2 F
Vs. Drain Current
J
50K
3mA
Current Sampling Resistors
.3 F
75
I
G
D.U.T.
100
I

D
TOP
BOTTOM
+
-
V
DS
125
( C)
°
I D
1.9A
3.4A
4.2A
N-CHANNEL
150
Fig 16c. Unclamped Inductive Test Circuit
Fig 16d. Unclamped Inductive Waveforms
I
A S
Fig 18. Basic Gate Charge Waveform
V
GS
R G
2 0 V
V
V D S
G
t p
Q
t p
GS
I A S
D .U .T
0 .0 1
L
V
Q
Charge
Q
(B R )D SS
GD
G
IRF7350
1 5 V
D R IV E R
+
-
V D D
7
A