IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 9

• Manufacturer Part Number: IRF7350TRPBF
• Description: MOSFET N/P-CH 100V 2.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7350TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.1A, 1.5A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
10.00
0.01
1.00
0.10
0.01
100
Fig 21. Typical Output Characteristics
0.1
Fig 23. Typical Transfer Characteristics
10
1
0.1
4.0
TOP
BOTTOM -4.0V
T J = 25°C
-V DS , Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
VGS
-15V
-10V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
6.0
1
20µs PULSE WIDTH
Tj = 25°C
V DS = -25V
20µs PULSE WIDTH
-4.0V
T J = 150°C
8.0
10
P-CHANNEL
10.0
100
0.01
100
0.1
10
1
2.5
2.0
1.5
1.0
0.5
0.0
Fig 24. Normalized On-Resistance
Fig 22. Typical Output Characteristics
0.1
-60
TOP
BOTTOM -4.0V

I
D
=
-40
-1.5A
-V DS , Drain-to-Source Voltage (V)
-20
T , Junction Temperature
VGS
Vs. Temperature
-15V
-10V
-7.0V
-6.0V
-5.5V
J
-5.0V
-4.5V
0
1
20
40
20µs PULSE WIDTH
Tj = 150°C
60
IRF7350
80
-4.0V
10
100

( C)
V
°
120
GS
=
140
-10V
9
100
160