GWM100-0085X1-SMD IXYS, GWM100-0085X1-SMD Datasheet - Page 2

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GWM100-0085X1-SMD

Manufacturer Part Number
GWM100-0085X1-SMD
Description
IC FULL BRIDGE 3PH ISOPLUS SMD
Manufacturer
IXYS
Datasheet

Specifications of GWM100-0085X1-SMD

Fet Type
6 N-Channel (3-Phase Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.2 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
103A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
114nC @ 10V
Mounting Type
Surface Mount
Package / Case
Surface Mount
Vdss, Max, (v)
85
Id25, Tc = 25°c, (a)
103
Id80, Tc = 80°c, (a)
-
Id90, Tc = 90°c, (a)
77
Rds(on), Max, Tj = 25°c, (mohms)
6.2
Tf, Typ, (ns)
-
Tr, Typ, (ns)
-
Rthjc, Max, (ºc/w)
1.0
Package Style
ISOPLUS-DIL™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Source-Drain Diode
Symbol
V
t
Q
I
Component
Symbol
I
T
T
V
F
Symbol
R
C
Weight
1)
rr
RM
RMS
J
stg
C
V
SD
ISOL
pin to chip
RM
P
DS
= I
D
·(R
1)
DS(on)
Conditions
(diode) I
I
T
Conditions
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
I
mounting force with clip
Conditions
L+ to L1/L2/L3 or L- to L1/L2/L3
coupling capacity between shorted
pins and mounting tab in the case
F
ISOL
VJ
= 100 A; -di
+ R
= 125°C
< 1 mA, 50/60 Hz, f = 1 minute
Pin to Chip
F
= 100 A; V
)
F
/dt = 800 A/µs; V
GS
= 0 V
R
(T
= 24 V
J
= 25°C, unless otherwise specified)
min.
min.
Characteristic Values
Characteristic Values
Maximum Ratings
typ.
typ.
160
0.9
tbd
tbd
tbd
1.0
25
-55...+175
-55...+125
50 - 250
1000
max.
max.
300
1.2
mW
pF
µC
V~
°C
°C
ns
N
V
A
A
g
GWM100-0085X1
20110307
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