GWM160-0055X1-SL IXYS, GWM160-0055X1-SL Datasheet - Page 2

• Manufacturer Part Number: GWM160-0055X1-SL
• Description: IC FULL BRIDGE 3PH ISOPLUS STRT
• Manufacturer: IXYS

Specifications of GWM160-0055X1-SL

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Mounting Type: Surface Mount
• Package / Case: Through Hole
• Vdss, Max, (v): 55
• Id25, Tc = 25°c, (a): 150
• Id80, Tc = 80°c, (a): -
• Id90, Tc = 90°c, (a): 115
• Rds(on), Max, Tj = 25°c, (mohms): 3.3
• Tf, Typ, (ns): 120
• Tr, Typ, (ns): 125
• Rthjc, Max, (ºc/w): 1.0
• Package Style: ISOPLUS-DIL™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Source-Drain Diode
Symbol
V
t
Q
I
Component
Symbol
I
T
T
V
F
Symbol
R
C
Weight
1)
rr
RM
RMS
J
stg
C
V
SD
ISOL
pin to chip
RM
P
DS
= I
D
·(R
1)
DS(on)
Conditions
(diode) I
I
Conditions
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
I
mounting force with clip
Conditions
coupling capacity between shorted
pins and mounting tab in the case
F
ISOL
= 100 A; -di
+ 2R
< 1 mA, 50/60 Hz, f = 1 minute
Pin to Chip
F
= 100 A; V
)
F
/dt = 800 A/µs; V
GS
= 0 V
R
(T
= 24 V
J
= 25°C, unless otherwise specified)
min.
min.
Characteristic Values
Characteristic Values
0.42
Maximum Ratings
typ.
typ.
160
1.0
0.6
25
40
20
-55...+175
-55...+125
50 - 250
1000
max.
max.
300
1.3
mW
pF
µC
V~
°C
°C
ns
N
V
A
A
g
GWM 160-0055X1
20110307i
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