UPA2791GR-E2-AT Renesas Electronics America, UPA2791GR-E2-AT Datasheet - Page 12

• Manufacturer Part Number: UPA2791GR-E2-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA2791GR-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10
0.001
0.01
100
100
0.1
160
140
120
100
10
10
80
60
40
20
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
0
-0.1
-50
0
V
V
R
DD
GS
G
V
SWITCHING CHARACTERISTICS
= 10 Ω
V
F(S-D)
= −15 V
= −10 V
T
GS
ch
= −4.5 V
- Channel Temperature - °C
0
- Source to Drain Voltage - V
I
D
0.5
-1
- Drain Current - A
t
t
d(off)
f
V
GS
50
= −4.5 V
0 V
−10 V
t
t
-10
r
d(on)
1
I
Pulsed
100
D
= −3.0 A
Pulsed
Data Sheet G18207EJ2V0DS
-100
1.5
150
1000
100
-30
-25
-20
-15
-10
100
10
-5
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0
1
-0.01
0.1
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
V
di/dt = 50 A/μs
f = 1 MHz
V
GS
GS
= 0 V
V
V
2
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
= 0 V
DS
I
DD
F
-0.1
- Diode Forward Current - A
- Drain to Source Voltage - V
Q
= −24 V
G
−15 V
- Gate Charge - nC
4
1
−6 V
V
DS
V
6
GS
-1
C
C
C
iss
oss
rss
10
8
μ
PA2791GR
-10
I
D
10
= −5 A
100
12
-100
-12
-10
-8
-6
-4
-2
0