UPA2791GR-E2-AT Renesas Electronics America, UPA2791GR-E2-AT Datasheet - Page 8

• Manufacturer Part Number: UPA2791GR-E2-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA2791GR-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
100
2.5
1.5
0.5
25
20
15
10
80
60
40
20
5
0
2
1
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
-50
0
1
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
V
I
GS
D
DS
= 1 mA
0.5
V
= 10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
T
= 10 V
DS
ch
- Drain to Source Voltage - V
- Channel Temperature - °C
0
I
4.5 V
D
1
- Drain Current - A
V
1.5
GS
50
10
= 4.5 V
10 V
2
100
2.5
Pulsed
Pulsed
Data Sheet G18207EJ2V0DS
150
100
3
0.0001
0.001
0.001
0.01
0.01
100
100
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.1
80
60
40
20
10
10
0
1
1
FORWARD TRANSFER CHARACTERISTICS
100
0
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
T
DS
μ
A
= 150°C
= 10 V
V
V
−25°C
GS
1 m
GS
75°C
25°C
- Gate to Source Voltage - V
- Gate to Source Voltage - V
5
1
I
T
D
A
10 m
- Drain Current - A
= 150°C
−25°C
25°C
75°C
10
2
100 m
μ
PA2791GR
15
V
Pulsed
I
Pulsed
3
D
DS
= 3.0 A
1
= 10 V
20
10
4