UPA2791GR-E2-AT Renesas Electronics America, UPA2791GR-E2-AT Datasheet - Page 4
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UPA2791GR-E2-AT
Manufacturer Part Number
UPA2791GR-E2-AT
Description
MOSFET N/P-CH 30V 8-SOIC
Manufacturer
Renesas Electronics America
Datasheet
1.UPA2791GR-E1-AT.pdf
(14 pages)
Specifications of UPA2791GR-E2-AT
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
36 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
400pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
<R>
<R>
<R>
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10
2
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
3. Starting T
2. Mounted on ceramic substrate of 2000 mm
PARAMETER
μ
C
Note1
ch
s, Duty Cycle ≤ 1%
= 25°C)
= 25°C, V
Note3
DS
Note3
GS
= 0 V)
= 0 V)
Note2
Note2
Note2
DD
= 1/2 x V
A
DSS
= 25°C. All terminals are connected.)
V
V
I
I
P
P
T
T
I
E
, R
D(DC)
D(pulse)
AS
ch
stg
DSS
GSS
T1
T2
AS
Data Sheet G18207EJ2V0DS
SYMBOL
G
= 25 Ω, L = 100
2
x 1.6 mmt
N-CHANNEL
μ
H, V
±20
±20
30
±5
5
GS
= V
−55 to +150
GSS
150
1.7
2.0
2.5
→ 0 V
P-CHANNEL
−30
m
m
m
−5
20
20
5
μ
PA2791GR
UNIT
mJ
°C
°C
W
W
V
V
A
A
A