UPA2791GR-E2-AT Renesas Electronics America, UPA2791GR-E2-AT Datasheet - Page 3

• Manufacturer Part Number: UPA2791GR-E2-AT
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA2791GR-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No. G18207EJ2V0DS00 (2nd edition)
Date Published November 2007 NS
Printed in Japan
DESCRIPTION
Transistors designed for switching application.
• Low gate charge
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
FEATURES
• Low on-state resistance
N-channel Q
P-channel Q
The
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
N-channel R
P-channel R
μ
μ
PA2791GR-E1-AT
PA2791GR-E2-AT
μ
PART NUMBER
PA2791GR is N- and P-channel MOS Field Effect
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
caution for electrostatic discharge. V
N-channel
Source
Drain
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
R
R
DS(on)1
DS(on)2
DS(on)1
DS(on)2
G
G
= 10 nC TYP. (V
= 8.3 nC TYP. (V
Body
Diode
= 82 mΩ MAX. (V
= 110 mΩ MAX. (V
= 36.0 mΩ MAX. (V
= 50.0 mΩ MAX. (V
Note
Note
N- AND P-CHANNEL POWER MOS FET
LEAD PLATING
Gate
GS
Gate
Protection
Diode
GS
Pure Sn
= 10 V)
= −10 V)
The mark <R> shows major revised points.
GS
GS
GS
GS
= −10 V, I
= −4.5 V, I
P-channel
= 10 V, I
= 4.5 V, I
Source
DATA SHEET
Drain
SWITCHING
ESD
D
D
= −3.0 A)
D
± 600 V TYP. (C = 100 pF, R = 1.5 kΩ)
D
Body
Diode
= 3.0 A)
= −3.0 A)
= 3.0 A)
MOS FIELD EFFECT TRANSISTOR
Tape 2500
PACKING
p/reel
8
1
5.37 MAX.
μ
PACKAGE DRAWING (Unit: mm)
0.40
1.27
+0.10
–0.05
PA2791GR
0.78 MAX.
5
4
Power SOP8
PACKAGE
0.12 M
N-channel
P-channel
0.5 ± 0.2
6.0 ± 0.3
4.4
1
2
7, 8 : Drain 1
3
4
5, 6 : Drain 2
: Source 1
: Gate 1
: Source 2
: Gate 2
2006, 2007
0.8
0.10