IRFR9020TRPBF Vishay, IRFR9020TRPBF Datasheet

MOSFET P-CH 50V 9.9A DPAK

IRFR9020TRPBF

Manufacturer Part Number
IRFR9020TRPBF
Description
MOSFET P-CH 50V 9.9A DPAK
Manufacturer
Vishay
Datasheets

Specifications of IRFR9020TRPBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
9.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
490pF @ 25V
Power - Max
42W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.9 A
Power Dissipation
42000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-9.9A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IRFR9020PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9020TRPBF
Manufacturer:
VISHAY
Quantity:
4 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90335
S10-1122-Rev. B, 10-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
(TO-252)
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
D
DS
DPAK
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 17 A, dI/dt ≤ 110 A/μs, V
= 25 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 541 μH, R
G
c
D S
b
DD
V
GS
≤ V
e
= 10 V
DS
G
, T
DPAK (TO-252)
SiHFR020-GE3
IRFR020PbF
SiHFR020-E3
IRFR020
SiHFR020
N-Channel MOSFET
J
e
Single
≤ 150 °C.
5.8
60
25
11
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted
Power MOSFET
V
0.10
IRFR020, IRFU020, SiHFR020, SiHFU020
GS
AS
at 10 V
= 14 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Surface Mount (IRFR020, SiHFR020)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques.
DPAK (TO-252)
SiHFR020TR-GE3
IRFR020TRPbF
SiHFR020T-E3
IRFR020TR
SiHFR020T
Definition
SYMBOL
a
a
T
dV/dt
J
V
V
E
I
, T
P
device
DM
a
I
GS
DS
AS
a
D
D
stg
design,
- 55 to + 150
IPAK (TO-251)
SiHFU020-GE3
IRFU020PbF
SiHFU020-E3
IRFU020
SiHFU020
LIMIT
0.020
260
± 20
0.33
9.0
2.5
5.5
60
14
56
91
42
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
°C
W
V
A
and
1

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IRFR9020TRPBF Summary of contents

Page 1

... Ease of Paralleling Single • Simple Drive Requirements D • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. ...

Page 2

... IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 90335 S10-1122-Rev. B, 10-May-10 IRFR020, IRFU020, SiHFR020, SiHFU020 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 90335 S10-1122-Rev. B, 10-May-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90335 S10-1122-Rev. B, 10-May-10 IRFR020, IRFU020, SiHFR020, SiHFU020 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms Vishay Siliconix D.U. d(off) f www.vishay.com 5 ...

Page 6

... IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90335. Document Number: 90335 S10-1122-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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