IRFR9020TRPBF Vishay, IRFR9020TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR9020TRPBF
• Description: MOSFET P-CH 50V 9.9A DPAK
• Manufacturer: Vishay

Specifications of IRFR9020TRPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.9 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9.9A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IRFR9020PBFTR

IRFR020, IRFU020, SiHFR020, SiHFU020
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted
a
SYMBOL
SYMBOL
ΔV
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
L
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
J
GS
GS
R
V
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
G
DS
Reference to 25 °C, I
= 10 V
= 10 V
J
= 18 Ω, R
MIN.
= 25 °C, I
= 48 V, V
-
-
-
V
V
f = 1.0 MHz, see fig. 5
V
V
V
TEST CONDITIONS
DS
GS
DS
DS
DD
c
F
= V
= 0 V, I
V
= 60 V, V
= 25 V, I
= 30 V, I
V
= 17 A, dI/dt = 100 A/μs
V
GS
D
DS
S
GS
GS
GS
I
= 1.7 Ω, see fig. 10
D
= 14 A, V
= ± 20 V
= 25 V,
, I
= 0 V, T
= 0 V,
see fig. 6 and 13
= 17 A, V
D
D
D
D
= 250 μA
= 250 μA
GS
I
D
= 8.4 A
= 17 A,
= 8.4 A
= 0 V
D
TYP.
J
GS
= 1 mA
-
-
-
= 125 °C
DS
G
G
= 0 V
= 48 V,
b
b
D
S
b
b
D
S
b
MIN.
2.0
6.2
MAX.
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
3.0
50
S10-1122-Rev. B, 10-May-10
Document Number: 90335
0.073
TYP.
0.29
640
360
4.5
7.5
79
13
58
25
42
88
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
0.10
0.64
250
180
4.0
5.8
1.5
S
25
25
11
14
56
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns
Ω
S
A
V
V
V