IRFR9020TRPBF Vishay, IRFR9020TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR9020TRPBF
• Description: MOSFET P-CH 50V 9.9A DPAK
• Manufacturer: Vishay

Specifications of IRFR9020TRPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.9 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9.9A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IRFR9020PBFTR

IRFR020, IRFU020, SiHFR020, SiHFU020
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
Document Number: 90335
4
S10-1122-Rev. B, 10-May-10