BSS84,215 NXP Semiconductors, BSS84,215 Datasheet
BSS84,215
Specifications of BSS84,215
933946360215
BSS84 T/R
BSS84T/R
Related parts for BSS84,215
BSS84,215 Summary of contents
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BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS) transistor in a small Surface-Mounted Device (SMD) plastic package. Table 1. Type number ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BSS84 BSS84/DG [1] /DG: halogen-free 4. Marking Table 4. Type number BSS84 BSS84/DG [1] /DG: halogen-free [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BSS84_6 Product data sheet P-channel enhancement mode vertical DMOS transistor ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol tot T stg T j [1] Device mounted on a Printed-Circuit Board (PCB (mA (1) R limitation DSon Fig 1. Safe operating area; continuous and peak drain currents as a function of drain-source voltage ...
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... NXP Semiconductors Fig 2. 6. Thermal characteristics Table 6. Symbol R th(j-a) [1] Mounted on a PCB, vertical in still air th(j-a) = 0.75 (K/W) 0.5 2 0.2 10 0.1 0.05 10 0.02 0. Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration BSS84_6 Product data sheet P-channel enhancement mode vertical DMOS transistor ...
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... NXP Semiconductors 7. Characteristics Table unless otherwise specified. j Symbol Static characteristics V (BR)DSS V GS(th) I DSS I GSS R DSon Dynamic characteristics iss C oss C rss off BSS84_6 Product data sheet P-channel enhancement mode vertical DMOS transistor Characteristics Parameter Conditions drain-source breakdown voltage gate-source threshold mA voltage ...
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... NXP Semiconductors 600 7 (mA) 400 200 Fig 4. Output characteristics: drain current as a function of drain-source voltage; typical values 600 I D (mA) 400 200 Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values BSS84_6 Product data sheet P-channel enhancement mode vertical DMOS transistor ...
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... NXP Semiconductors 1.2 V GSth V GSth(25 C) 1.0 0 Fig 8. Gate-source threshold voltage as a function of junction temperature 8. Test information Fig 10. Switching time test circuit BSS84_6 Product data sheet P-channel enhancement mode vertical DMOS transistor mld195 80 C (pF 100 150 Fig 9. Input, output and reverse transfer capacitances as a function of drain-source voltage ...
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... NXP Semiconductors 9. Package outline Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig 12. Package outline SOT23 (TO-236AB) BSS84_6 Product data sheet P-channel enhancement mode vertical DMOS transistor ...
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... NXP Semiconductors 10. Revision history Table 8. Revision history Document ID Release date BSS84_6 20081216 • Modifications: Table 5 “Limiting BSS84_5 20081209 BSS84_4 20070717 BSS84_3 20030804 BSS84_2 19970618 BSS84_1 19950407 BSS84_6 Product data sheet P-channel enhancement mode vertical DMOS transistor Data sheet status Change notice ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 13. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Legal information ...