BSS84,215 NXP Semiconductors, BSS84,215 Datasheet - Page 6

• Manufacturer Part Number: BSS84,215
• Description: MOSFET P-CH 50V 130MA SOT-23
• Manufacturer: NXP Semiconductors
• Type: Small Signalr

Specifications of BSS84,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 130mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 130mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 45pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.13 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 10Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1660-2; 933946360215; BSS84 T/R; BSS84T/R

NXP Semiconductors
BSS84_6
Product data sheet
Fig 4.
Fig 6.
(mA)
(mA)
I
I
600
400
200
600
400
200
D
D
0
0
0
T
Output characteristics: drain current as a
function of drain-source voltage; typical
values
0
T
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
j
j
= 25 C
= 25 C; V
V
GS
= 10 V
2
2
DS
4
= 10 V
7.5 V
4
6
6
6 V
8
8
10
V
V
mld197
GS
4 V
2.5 V
mld196
5 V
3 V
DS
Rev. 06 — 16 December 2008
(V)
(V)
12
10
P-channel enhancement mode vertical DMOS transistor
Fig 5.
Fig 7.
R
DSon(25 C)
R
R
DSon
DSon
( )
1.8
1.4
1.0
0.6
60
40
20
0
1
T
Drain-source on-state resistance as a function
of drain current; typical values
(1) I
(2) I
Normalized drain-source on-state resistance
factor as a function of junction temperature
50
j
= 25 C
D
D
= 130 mA; V
= 20 mA; V
0
10
V
GS
GS
= 2.5 V
GS
= 2.4 V
50
= 10 V
10
3 V
2
100
I
4 V
D
© NXP B.V. 2008. All rights reserved.
(mA)
T
j
5 V
mld198
mld194
( C)
BSS84
7.5 V
(1)
(2)
10 V
10
150
3
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