BSH103,215 NXP Semiconductors, BSH103,215 Datasheet
BSH103,215
Specifications of BSH103,215
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BSH103 T/R
BSH103 T/R
BSH103,215
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BSH103,215 Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b M3D088 1998 Feb 11 ...
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Philips Semiconductors N-channel enhancement mode MOS transistor FEATURES Very low threshold High-speed switching No secondary breakdown Direct interface to C-MOS, TTL etc. APPLICATIONS Power management converters Battery powered applications ‘Glue-logic’; interface between logic blocks and/or periphery General ...
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Philips Semiconductors N-channel enhancement mode MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage (DC gate-source voltage (DC drain current (DC peak drain current ...
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Philips Semiconductors N-channel enhancement mode MOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j handbook, full pagewidth R th j-s (K/ 0.75 10 0.5 0.33 0.2 0.1 10 0.05 ...
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Philips Semiconductors N-channel enhancement mode MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GSth I drain-source leakage current DSS I gate leakage current GSS R drain-source ...
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Philips Semiconductors N-channel enhancement mode MOS transistor handbook, full pagewidth Fig.5 Switching times test circuit with input and output waveforms. 5 handbook, halfpage (1) ( ...
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Philips Semiconductors N-channel enhancement mode MOS transistor 4 handbook, halfpage 300 s; DS amb p Fig.8 Transfer characteristic; typical values. 2 ...
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Philips Semiconductors N-channel enhancement mode MOS transistor 1.2 handbook, halfpage k 0.8 0 GSth j GSth ------------------------------------- - . GSth Fig.12 Temperature ...
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Philips Semiconductors N-channel enhancement mode MOS transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 ...
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Philips Semiconductors N-channel enhancement mode MOS transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification ...
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Philips Semiconductors N-channel enhancement mode MOS transistor 1998 Feb 11 NOTES 11 Product specification BSH103 ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...