BSH103,215 NXP Semiconductors, BSH103,215 Datasheet

MOSFET N-CH 30V 0.85A SOT23

BSH103,215

Manufacturer Part Number
BSH103,215
Description
MOSFET N-CH 30V 0.85A SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BSH103235.pdf (12 pages)

Specifications of BSH103,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
850mA
Vgs(th) (max) @ Id
400mV @ 1mA
Gate Charge (qg) @ Vgs
2.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
83pF @ 24V
Power - Max
540mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.85 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5013-2
934054713215
BSH103 T/R
BSH103 T/R
BSH103,215

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSH103,215
Manufacturer:
TI
Quantity:
12 900
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSH103,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product specification
Supersedes data of 1998 Jan 30
File under Discrete Semiconductors, SC13b
andbook, halfpage
DATA SHEET
BSH103
N-channel enhancement mode
MOS transistor
DISCRETE SEMICONDUCTORS
M3D088
1998 Feb 11

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BSH103,215 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b M3D088 1998 Feb 11 ...

Page 2

Philips Semiconductors N-channel enhancement mode MOS transistor FEATURES Very low threshold High-speed switching No secondary breakdown Direct interface to C-MOS, TTL etc. APPLICATIONS Power management converters Battery powered applications ‘Glue-logic’; interface between logic blocks and/or periphery General ...

Page 3

Philips Semiconductors N-channel enhancement mode MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage (DC gate-source voltage (DC drain current (DC peak drain current ...

Page 4

Philips Semiconductors N-channel enhancement mode MOS transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to soldering point th j handbook, full pagewidth R th j-s (K/ 0.75 10 0.5 0.33 0.2 0.1 10 0.05 ...

Page 5

Philips Semiconductors N-channel enhancement mode MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GSth I drain-source leakage current DSS I gate leakage current GSS R drain-source ...

Page 6

Philips Semiconductors N-channel enhancement mode MOS transistor handbook, full pagewidth Fig.5 Switching times test circuit with input and output waveforms. 5 handbook, halfpage (1) ( ...

Page 7

Philips Semiconductors N-channel enhancement mode MOS transistor 4 handbook, halfpage 300 s; DS amb p Fig.8 Transfer characteristic; typical values. 2 ...

Page 8

Philips Semiconductors N-channel enhancement mode MOS transistor 1.2 handbook, halfpage k 0.8 0 GSth j GSth ------------------------------------- - . GSth Fig.12 Temperature ...

Page 9

Philips Semiconductors N-channel enhancement mode MOS transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 ...

Page 10

Philips Semiconductors N-channel enhancement mode MOS transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification ...

Page 11

Philips Semiconductors N-channel enhancement mode MOS transistor 1998 Feb 11 NOTES 11 Product specification BSH103 ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...

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