BSH103,215 NXP Semiconductors, BSH103,215 Datasheet - Page 8

• Manufacturer Part Number: BSH103,215
• Description: MOSFET N-CH 30V 0.85A SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSH103,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 850mA
• Vgs(th) (max) @ Id: 400mV @ 1mA
• Gate Charge (qg) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 83pF @ 24V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5013-2; 934054713215; BSH103 T/R; BSH103 T/R; BSH103,215

Philips Semiconductors
1998 Feb 11
handbook, halfpage
N-channel enhancement mode
MOS transistor
Fig.12 Temperature coefficient of gate-source
k
=
k
1.2
0.8
0.4
------------------------------------- -
V
0
GSth
V
65
GSth
threshold voltage as a function of junction
temperature; typical values.
at 25 C
at T
j
15
.
35
V
GSth
at V
DS
85
= V
GS
; I
135
D
= 1 mA.
T j ( C)
MBK510
185
8
handbook, halfpage
Fig.13 Temperature coefficient of drain-source
k
=
k
1.6
1.2
0.8
0.4
---------------------------------------- -
R
0
DSon
R
65
DSon
on-resistance as a function of junction
temperature; typical values.
at 25 C
at T
15
j
.
(1) R
(2) R
35
DSon
DSon
at V
at V
85
GS
GS
Product specification
= 4.5 V; I
= 2.5 V; I
(1)
(2)
135
T j ( C)
BSH103
MBK511
D
D
= 0.5 mA.
= 0.5 mA.
185