PMV65XP,215 NXP Semiconductors, PMV65XP,215 Datasheet

MOSFET P-CH 20V 3.9A SOT-23

PMV65XP,215

Manufacturer Part Number
PMV65XP,215
Description
MOSFET P-CH 20V 3.9A SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Type
Power MOSFETr
Datasheet
1.PMV65XP215.pdf (12 pages)

Specifications of PMV65XP,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
76 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
950mV @ 1mA
Gate Charge (qg) @ Vgs
7.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
725pF @ 20V
Power - Max
1.92W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.076 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.9 A
Power Dissipation
1920 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.076Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2358-2
934058736215
PMV65XP T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
PMV65XP,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Description
gate (g)
source (s)
drain (d)
Discrete pinning
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
P-channel enhancement mode field effect transistor in a plastic package using
TrenchMOS™ technology.
PMV65XP
P-channel TrenchMOS™ extremely low level FET
Rev. 01 — 28 September 2004
Low threshold voltage
Low power DC-to-DC converters
Load switching
V
R
DS
DSon
Simplified outline
20 V
76 m
1
SOT23
3
SOT23
Low on-state resistance.
Battery management
Battery powered portable equipment.
I
Q
D
gd
2
= 0.65 nC (typ).
3.9 A
Product data sheet
Symbol
g
003aaa671
d
s

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PMV65XP,215 Summary of contents

Page 1

PMV65XP P-channel TrenchMOS™ extremely low level FET Rev. 01 — 28 September 2004 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Low threshold voltage 1.3 Applications Low ...

Page 2

Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name PMV65XP SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp) 5.1 Transient thermal impedance th(j-sp) 0.5 (K/W) 0.2 10 0.1 0.05 0.02 1 single pulse -1 10 ...

Page 5

Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage I (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors ( 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values ( ...

Page 7

Philips Semiconductors 1.2 -V GS(th) max (V) 0.8 typ min 0 Fig 9. Gate-source threshold voltage as a function of junction temperature 2.8 A; ...

Page 8

Philips Semiconductors ( 150 0.3 0 and 150 Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; ...

Page 9

Philips Semiconductors 7. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig ...

Page 10

Philips Semiconductors 8. Revision history Table 6: Revision history Document ID PMV65XP_1 9397 750 13993 Product data sheet P-channel TrenchMOS™ extremely low level FET Release Data sheet Change date status notice 20040928 Product - data sheet Rev. 01 — 28 ...

Page 11

Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 12

Philips Semiconductors 14. Contents 1 Product profi 1.1 General description ...

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