PMV65XP,215 NXP Semiconductors, PMV65XP,215 Datasheet - Page 9

MOSFET P-CH 20V 3.9A SOT-23

PMV65XP,215

Manufacturer Part Number
PMV65XP,215
Description
MOSFET P-CH 20V 3.9A SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Type
Power MOSFETr
Datasheet

Specifications of PMV65XP,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
76 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
950mV @ 1mA
Gate Charge (qg) @ Vgs
7.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
725pF @ 20V
Power - Max
1.92W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.076 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.9 A
Power Dissipation
1920 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.076Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2358-2
934058736215
PMV65XP T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMV65XP,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
7. Package outline
Fig 14. SOT23 package outline.
9397 750 13993
Product data sheet
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
Rev. 01 — 28 September 2004
REFERENCES
0
2
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
1
2.5
2.1
H
E
P-channel TrenchMOS™ extremely low level FET
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
EUROPEAN
w
L p
A
Q
PMV65XP
c
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23
9 of 12

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