PMV65XP,215 NXP Semiconductors, PMV65XP,215 Datasheet - Page 3

MOSFET P-CH 20V 3.9A SOT-23

PMV65XP,215

Manufacturer Part Number
PMV65XP,215
Description
MOSFET P-CH 20V 3.9A SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Type
Power MOSFETr
Datasheet

Specifications of PMV65XP,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
76 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
950mV @ 1mA
Gate Charge (qg) @ Vgs
7.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
725pF @ 20V
Power - Max
1.92W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.076 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.9 A
Power Dissipation
1920 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.076Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2358-2
934058736215
PMV65XP T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMV65XP,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
9397 750 13993
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
-I
10
10
P
10
(%)
120
D
10
der
-1
-2
80
40
2
1
0
10
function of solder point temperature.
T
P
0
sp
der
-1
= 25 C; I
=
---------------------- -
P
tot 25 C
50
P
DM
tot
is single pulse; V
100%
100
Limit R
DSon
GS
150
= -V
= 4.5 V
T
03aa17
DS
sp
1
( C)
/ -I
D
Rev. 01 — 28 September 2004
200
DC
Fig 2. Normalized continuous drain current as a
P-channel TrenchMOS™ extremely low level FET
(%)
I
der
120
80
40
0
function of solder point temperature.
I
0
der
=
10
-------------------
I
D 25 C
I
50
D
100%
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
t
100 s
1 ms
10 ms
100 ms
p
100
= 10 s
-V
DS
(V)
PMV65XP
150
T
03ar44
03aa25
sp
( C)
10
200
2
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