BSP89,115 NXP Semiconductors, BSP89,115 Datasheet - Page 2

• Manufacturer Part Number: BSP89,115
• Description: MOSFET N-CH 240V 375MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP89,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 340mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 375mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 120pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 240 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.375 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1769-2; 934018750115; BSP89 T/R

Philips Semiconductors
FEATURES
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
SOT223 package, intended for use as
a surface-mounted device in line
current interrupters in telephone sets
and for application in relay, high
speed and line transformer drivers.
PINNING - SOT223
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum
2001 May 18
V
V
I
I
P
T
T
D
DM
stg
j
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
SYMBOL
DS
GSO
tot
PIN
N-channel enhancement mode
vertical D-MOS transistor
1
2
3
4
6 cm
2
gate
drain
source
drain
.
Code: BSP89
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
DESCRIPTION
PARAMETER
QUICK REFERENCE DATA
V
V
I
R
D
SYMBOL
DS
GSth
DSon
handbook, halfpage
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
Fig.1 Simplified outline (SOT223) and symbol.
2
Top view
open drain
T
amb
1
PARAMETER
25 C; note 1
CONDITIONS
2
4
3
MAM109
g
d
s
MIN.
Product specification
55
240
2
375
5
MAX.
240
375
1.5
1.5
+150
150
MAX.
20
BSP89
V
V
mA
UNIT
V
V
mA
A
W
UNIT
C
C