BSP89,115 NXP Semiconductors, BSP89,115 Datasheet - Page 7
![MOSFET N-CH 240V 375MA SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BSP89,115
Manufacturer Part Number
BSP89,115
Description
MOSFET N-CH 240V 375MA SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BSP89115.pdf
(8 pages)
Specifications of BSP89,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 Ohm @ 340mA, 10V
Drain To Source Voltage (vdss)
240V
Current - Continuous Drain (id) @ 25° C
375mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
120pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.375 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1769-2
934018750115
BSP89 T/R
934018750115
BSP89 T/R
Philips Semiconductors
2001 May 18
N-channel enhancement mode
vertical D-MOS transistor
NOTES
7
Product specification
BSP89