PSMN6R0-30YL,115 NXP Semiconductors, PSMN6R0-30YL,115 Datasheet - Page 2
![MOSFET N-CH 30V 79A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PSMN6R0-30YL,115
Manufacturer Part Number
PSMN6R0-30YL,115
Description
MOSFET N-CH 30V 79A LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN6R0-30YL115.pdf
(14 pages)
Specifications of PSMN6R0-30YL,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
79A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1425pF @ 12V
Power - Max
55W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
79 A
Power Dissipation
55 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4685-2
934063076115
PSMN6R0-30YL T/R
934063076115
PSMN6R0-30YL T/R
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN6R0-30YL
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN6R0-30YL
Symbol
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DSM
DGR
GS
tot
DS(AL)S
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
peak drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
source
source
source
gate
mounting base; connected to
drain
LFPAK
Package
Name
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Conditions
T
t
pulsed
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
p
j
j
mb
mb
GS
GS
GS
sup
≤ 25 ns; f ≤ 500 kHz; E
≥ 25 °C; T
≥ 25 °C; T
Rev. 04 — 10 March 2011
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
Simplified outline
p
p
≤ 10 µs; T
≤ 10 µs; T
SOT669 (LFPAK)
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
1 2 3 4
= 100 °C; see
= 25 °C; see
N-channel 30 V 6 mΩ logic level MOSFET in LFPAK
= 50 Ω; unclamped
Figure 2
= 25 °C; I
mb
mb
mb
= 25 °C;
= 25 °C
DS(AL)
GS
D
= 20 kΩ
= 73 A;
Figure 1
Figure 1
≤ 110 nJ;
Graphic symbol
PSMN6R0-30YL
mbb076
G
Min
-
-
-
-20
-
-
-
-
-55
-55
-
-
-
© NXP B.V. 2011. All rights reserved.
D
S
175
175
Version
Max
30
35
30
20
56
79
292
55
73
292
26
Unit
V
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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