PSMN6R0-30YL,115 NXP Semiconductors, PSMN6R0-30YL,115 Datasheet - Page 9
![MOSFET N-CH 30V 79A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PSMN6R0-30YL,115
Manufacturer Part Number
PSMN6R0-30YL,115
Description
MOSFET N-CH 30V 79A LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN6R0-30YL115.pdf
(14 pages)
Specifications of PSMN6R0-30YL,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
79A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1425pF @ 12V
Power - Max
55W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
79 A
Power Dissipation
55 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4685-2
934063076115
PSMN6R0-30YL T/R
934063076115
PSMN6R0-30YL T/R
NXP Semiconductors
PSMN6R0-30YL
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
80
S
60
40
20
0
0.0
All information provided in this document is subject to legal disclaimers.
0.2
Rev. 04 — 10 March 2011
0.4
T
j
= 150 °C
0.6
N-channel 30 V 6 mΩ logic level MOSFET in LFPAK
0.8
25 °C
1.0
003aac626
V
SD
(V)
1.2
PSMN6R0-30YL
© NXP B.V. 2011. All rights reserved.
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