STQ1NK80ZR-AP STMicroelectronics, STQ1NK80ZR-AP Datasheet - Page 2

• Manufacturer Part Number: STQ1NK80ZR-AP
• Description: MOSFET N-CH 800V 0.3A TO-92
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STQ1NK80ZR-AP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 3W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Configuration: Single
• Resistance Drain-source Rds (on): 16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6197-3

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
2/15
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
Table 4: Thermal Data
(#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu
Table 5: Avalanche Characteristics
Table 6: GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Rthj-amb(#) Thermal Resistance Junction-ambient Max
V
Rthj-case
Rthj-lead
Symbol
dv/dt (1)
Symbol
Symbol
SD
BV
ESD(G-S)
I
V
DM
P
V
V
E
T
I
DGR
TOT
I
I
T
T
AR
stg
DS
GS
AS
GSO
D
D
1 A, di/dt 200 A/µs, V
j
l
( )
Thermal Resistance Junction-case Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD (HBM-C= 100pF, R= 1.5K
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Parameter
j
= 25 °C, I
DD
640
Parameter
Parameter
D
C
GS
= I
= 25°C
GS
j
= 20 k )
max)
AR
= 0)
Igs=± 1mA (Open
Drain)
, V
DD
Test Conditions
C
C
= 25°C
= 100°C
= 50 V)
TO-92
TO-92
0.025
0.19
120
260
Min.
0.3
40
--
30
3
Max Value
-55 to 150
SOT-223
SOT-223
Value
1000
± 30
0.25
0.16
0.02
800
800
2.5
4.5
50
50
Typ.
--
--
--
5
1
DPAK/IPAK
DPAK/IPAK
0.63
0.36
2.78
Max.
100
300
1.0
45
--
W /°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
A
V