STQ1NK80ZR-AP STMicroelectronics, STQ1NK80ZR-AP Datasheet - Page 3

• Manufacturer Part Number: STQ1NK80ZR-AP
• Description: MOSFET N-CH 800V 0.3A TO-92
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STQ1NK80ZR-AP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 3W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 300mA
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 13ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Configuration: Single
• Resistance Drain-source Rds (on): 16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6197-3

ELECTRICAL CHARACTERISTICS (T
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
I
R
oss eq.
V
V
SDM
(BR)DSS
g
t
t
I
I
I
I
C
SD
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
GSS
fs
RRM
RRM
DSS
I
Q
Q
2. Pulse width limited by safe operating area.
3. C
Q
SD
t
t
oss
t
t
iss
rss
rr
rr
r
gs
gd
f
(1)
rr
rr
g
(1)
V
(2)
DSS
oss eq.
(3)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
= 0)
CASE
I
V
V
V
V
V
V
V
V
V
R
(see Figure 21)
V
V
(see Figure 24)
I
I
V
(see Figure 22)
I
V
(see Figure 22)
D
SD
SD
SD
DS
DS
GS
DS
GS
DS
DS
GS
DD
DD
GS
DD
DD
G
= 1 mA, V
=25°C UNLESS OTHERWISE SPECIFIED)
= 4.7 V
= 1.0 A, V
= 1.0 A, di/dt = 100 A/µs
= 1.0 A, di/dt = 100 A/µs
= Max Rating
= Max Rating, T
= ± 20V
= V
= 10V, I
= 15 V
= 25 V
= 0V, V
= 400 V, I
= 640V, I
= 10V
= 50 V, T
= 50 V, T
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
,
DS
I
f = 1 MHz, V
D
GS
D
GS
D
D
GS
j
j
D
= 0.5 A
= 50 µA
= 0.5 A
= 25°C
= 150°C
= 0V to 640V
= 1.0 A,
= 0
= 10 V
= 0.5 A
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
800
3
oss
when V
802.7
Typ.
Typ.
Typ.
3.75
160
365
802
388
0.8
6.7
9.5
7.7
1.4
4.5
4.4
4.6
13
26
30
22
55
8
DS
increases from 0 to 80%
Max.
Max.
Max.
±10
4.5
1.0
1.6
50
16
1
5
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
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