STD12NF06T4 STMicroelectronics, STD12NF06T4 Datasheet - Page 13

• Manufacturer Part Number: STD12NF06T4
• Description: MOSFET N-CH 60V 12A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STD12NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 315pF @ 25V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3154-2

STD12NF06, STD12NF06T4
6
Revision history
Table 8.
09-Sep-2004
07-Aug-2006
19-Feb-2007
26-Nov-2009
15-Apr-2009
Date
Document revision history
Revision
3
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7
Doc ID 8431 Rev 7
Complete document
The document has been reformatted
Typo mistake on page 1
Table 1: Device summary
Mechanical data updated
Updated Q
rr
in
Table 7: Source drain
has been updated
Changes
diode.
Revision history
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