STD12NF06T4 STMicroelectronics, STD12NF06T4 Datasheet - Page 4

• Manufacturer Part Number: STD12NF06T4
• Description: MOSFET N-CH 60V 12A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STD12NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 315pF @ 25V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3154-2

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On /off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
Doc ID 8431 Rev 7
I
V
V
V
V
V
V
V
V
V
V
V
R
Figure 14 on page 8
D
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
G
= 25mA, V
= 4.7Ω, V
= V
= Max rating
= Max rating, T
= ±20V
= 10V, I
= 25V, f = 1 MHz,
= 0
= 10V
= 15V
= 48V, I
= 30V, I
Test conditions
Test conditions
Test conditions
GS
, I
,
I
D
D
D
D
D
GS
= 250µA
GS
= 6A
= 6A
= 12A
= 6A,
= 0
= 10V
C
= 125°C
STD12NF06, STD12NF06T4
Min.
-
Min.
Min.
60
2
-
-
-
Typ.
18
17
7
6
Typ.
0.08
Typ. Max. Unit
315
3.0
3.5
70
30
10
3
5
Max.
±100
Max. Unit
12
-
0.1
10
1
4
Unit
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
µA
µA
nA
S
W
V
V