2N7000 STMicroelectronics, 2N7000 Datasheet

MOSFET N-CH 60V 350MA TO-92

2N7000

Manufacturer Part Number
2N7000
Description
MOSFET N-CH 60V 350MA TO-92
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of 2N7000

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
2nC @ 5V
Input Capacitance (ciss) @ Vds
43pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.6 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 18 V
Continuous Drain Current
0.35 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Current, Drain
0.35 A
Gate Charge, Total
1.4 nC
Package Type
TO-92
Polarization
N-Channel
Resistance, Drain To Source On
1.8 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
7 ns
Time, Turn-on Delay
5 ns
Transconductance, Forward
0.6 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±18 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3110

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Features
Application
Description
This Power MOSFET is the second generation of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1.
Low Q
Low threshold drive
Switching applications
2N7000
2N7002
Type
Order codes
2N7000
2N7002
g
Device summary
V
60 V
60 V
DSS
N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92
< 5 Ω(@10V) 0.35 A
< 5 Ω(@10V) 0.20 A
R
DS(on)
2N7000G
Marking
ST2N
max
I
D
Figure 1.
STripFET™ Power MOSFET
SOT23-3L
Package
SOT23-3L
TO-92
SOT23-3L
3
Internal schematic diagram
1
2
Tape and reel
Packaging
TO-92
2N7000
2N7002
Bulk
TO-92
1/14

Related parts for 2N7000

2N7000 Summary of contents

Page 1

... Table 1. Device summary Order codes 2N7000 2N7002 R max I DS(on) D Figure 1. Marking 2N7000G ST2N 2N7000 2N7002 STripFET™ Power MOSFET SOT23-3L TO-92 Internal schematic diagram SOT23-3L Package Packaging TO-92 Bulk SOT23-3L Tape and reel ...

Page 2

... Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT 1. Pulse width limited by safe operating area Table 3. Thermal data Symbol Rthj-amb Thermal resistance junction-ambient max ...

Page 3

... 125 ° ± 4 Parameter Test conditions MHz 4.7 Ω Figure 16) (see Figure 17) (see 2N7000, 2N7002 Min. Typ 250 µA 1 2.1 = 0.5 A 1 Min. Typ 0 1.4 D 0.8 0.5 Max. Unit V 1 µA 10 µA ±100 Ω 5 Ω 5.3 Max. Unit ...

Page 4

... Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...

Page 5

... These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark. 10/14 2N7000, 2N7002 ...

Page 6

... Table 7. TO-92 mechanical data Dim Figure 22. TO-92 drawing mm Min. Typ. 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5° Package mechanical data Max. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 0102782 D 11/14 ...

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