STD36NH02L STMicroelectronics, STD36NH02L Datasheet

MOSFET N-CH 24V 30A DPAK

STD36NH02L

Manufacturer Part Number
STD36NH02L
Description
MOSFET N-CH 24V 30A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD36NH02L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
860pF @ 15V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7966-2
STD36NH02L

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD36NH02L
Manufacturer:
ST
0
Part Number:
STD36NH02LT4
Manufacturer:
ST
0
General features
1. Guaranteed when external Rg=4.7Ω and t
Description
This series of products utilizes the last advanced
design rules of ST’s proprietary STripFET™
technology. This is suitable for the most
demanding DC-DC converter application where
high efficiency is to be achieved.
Applications
April 2006
Order codes
STD36NH02L
R
Conduction losses reduced
Switching losses reduced
Switching application
DS(on)
Type
STD36NH02L
Part number
* Q
g
industry’s benchmark
V
24V
DSS
<0.0145Ω
R
DS(on)
f
D36NH02L
< t
Marking
fmax
30A
I
N-channel 24V - 0.011Ω - 30A - DPAK
D
(1)
Rev 1
Internal schematic diagram
STripFET™ III Power MOSFET
Package
DPAK
TO-252
STD36NH02L
1
3
Packaging
Tape & reel
www.st.com
1/13
13

Related parts for STD36NH02L

STD36NH02L Summary of contents

Page 1

... Switching application Order codes Part number STD36NH02L April 2006 N-channel 24V - 0.011Ω - 30A - DPAK STripFET™ III Power MOSFET R I DS(on) D (1) 30A < fmax Internal schematic diagram Marking D36NH02L Rev 1 STD36NH02L 3 1 TO-252 Package Packaging DPAK Tape & reel 1/13 www.st.com 13 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STD36NH02L . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STD36NH02L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol (1) V Drain-source voltage rating spike V Drain-Source Voltage ( Gate-Source Voltage GS (2) I Drain Current (continuous Drain Current (continuous (3) I Drain Current (pulsed Total Dissipation at T TOT Derating Factor (4) E Single pulse avalanche energy AS T Operating Junction Temperature ...

Page 4

... MHz 0.44V < 30A (see Figure 14) V =16V f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain = C +C oss gd ds STD36NH02L Min. Typ. Max 100 ± = 250µA 1 1.8 2.5 = 15A 0.011 0.0145 0.013 0.026 Min. Typ. Max. = 15A 18 860 255 45 < ...

Page 5

... STD36NH02L Table 5. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) Fall time t f Table 6. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STD36NH02L ...

Page 7

... STD36NH02L Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized B VDSS vs temperature 7/13 ...

Page 8

... Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/13 Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform STD36NH02L ...

Page 9

... STD36NH02L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STD36NH02L inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.019 0.023 0.236 0.244 0.200 ...

Page 11

... STD36NH02L 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 K0 2.55 2.75 P0 3.9 4.1 P1 7.9 8.1 P2 1.9 2 15.7 16.3 TAPE AND REEL SHIPMENT inch MIN ...

Page 12

... Revision history 6 Revision history Table 7. Revision history Date 27-Apr-2006 12/13 Revision 1 First Release STD36NH02L Changes ...

Page 13

... STD36NH02L Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords