STD36NH02L STMicroelectronics, STD36NH02L Datasheet - Page 4

• Manufacturer Part Number: STD36NH02L
• Description: MOSFET N-CH 24V 30A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD36NH02L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 15V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7966-2; STD36NH02L

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Q
V
Symbol
Q
Symbol
R
CASE
V
(BR)DSS
g
OSS
C
I
I
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
fs
Q
oss
oss
iss
rss
gd
gs
G
g
(1)
(2)
=25°C unless otherwise specified)
= C
oss
Forward transconductance
Input capacitance
Output Capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate Threshold Voltage
Static Drain-Source On
Resistance
On/off states
Dynamic
*∆ V
DS
= 0)
IN
, C
Parameter
Parameter
oss
GS
= C
= 0)
gd
+C
ds
V
V
V
0.44V < V
I
(see Figure 14)
V
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
I
V
V
V
V
V
V
D
D
DS
DS
GS
DS
DS
DS
GS
DS
GS
GS
= 30A, V
= 1mA, V
=16V, V
=0
= V
= 10V, I
= 5V, I
Test condictions
=10V, I
=15V, f=1 MHz,
Test condictions
= 20V,
= 20V @125°C
= ±20V
GS
DD
, I
D
GS
D
GS
D
= 15A
GS
D
< 10V,
= 15A
= 15A
= 250µA
=10V
=0
= 0
Min.
Min.
24
1
0.011
0.013
Typ.
Typ.
15.5
860
255
1.8
4.1
1.7
18
45
6
3
STD36NH02L
0.0145
0.026
Max.
Max.
±
2.5
100
20
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
ns
nA
Ω
S
Ω
Ω
V
V