STD3NK100Z STMicroelectronics, STD3NK100Z Datasheet - Page 3

• Manufacturer Part Number: STD3NK100Z
• Description: MOSFET N-CH 1000V 2.5A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 601pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 5.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7967-2; STD3NK100Z

STF3NK100Z - STP3NK100Z - STD3NK100Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
1. Pulse width limited by Tjmax
2. Starting Tj = 25°C, I
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt
E
ESD(G-S)
I
I
SD
DM
P
AR
V
V
AS
V
T
T
I
I
TOT
T
ISO
GS
DS
stg
D
D
L
j
(1)
≤
(2)
(2)
(3)
2.5A, di/dt
Absolute maximum ratings
Thermal data
Avalanche data
Thermal resistance junction-case max
Thermal resistance junction-amb max
Maximum lead temperature for soldering purpose
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C=100pF, R=1.5KΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;T
Operating junction temperature
Storage temperature
≤
200A/µs, V
D
= I
AR
, V
DD
DD
= 50V
Parameter
Parameter
= 80% V
Parameter
C
= 25°C
GS
= 0)
(BR)DSS
C
C
= 25°C
= 100°C
C
=25°C)
TO-220/DPAK TO-220FP
TO-220/DPAK TO-220FP
1.57
0.72
1.39
2.5
10
90
--
-55 to 150
Value
Value
Value
1000
3000
± 30
62.5
300
4.5
110
2.5
Electrical ratings
1.57
2.5
10
2500
0.2
25
5
(2)
(1)
(2)
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
°C
mJ
W
V
V
A
A
A
V
V
A
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