STD3NK100Z STMicroelectronics, STD3NK100Z Datasheet - Page 4

• Manufacturer Part Number: STD3NK100Z
• Description: MOSFET N-CH 1000V 2.5A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 601pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 5.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7967-2; STD3NK100Z

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 5.
Table 6.
1.
2. C
C
V
Symbol
Symbol
R
V
CASE
oss eq.
(BR)DSS
g
I
C
I
DS(on)
increases from 0 to 80% V
GS(th)
C
C
Q
Q
DSS
GSS
R
Pulsed: pulse duration = 300µs, duty cycle 1.5%
fs
Q
oss
oss eq.
rss
iss
gs
gd
G
g
(1)
=25°C unless otherwise specified)
(2)
is defined as constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Dynamic
On/off
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
I
V
V
V
V
V
f=1 MHz, open drain
V
V
V
V
V
(see Figure 17)
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
= 1mA, V
= V
= 10V, I
=800V, I
= Max rating,
= Max rating,Tc=125°C
= ± 20V
=15V, I
=25V, f=1 MHz, V
=0V, V
=10V
Test conditions
Test conditions
GS
STF3NK100Z - STP3NK100Z - STD3NK100Z
, I
DS
D
D
GS
D
D
= 1.25A
= 1.25A
= 50µA
=0V to 800V
= 2.5A
= 0
GS
=0
1000
Min.
Min.
3
Typ.
Typ.
3.75
601
2.4
8.6
3.6
9.2
5.4
53
12
15
18
oss
when V
Max. Unit
Max. Unit
±
4.5
50
10
1
6
DS
pF
pF
pF
pF
nC
nC
nC
µA
µA
µA
S
Ω
V
V
Ω