STB10NK60ZT4 STMicroelectronics, STB10NK60ZT4 Datasheet - Page 4
![MOSFET N-CH 600V 10A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB10NK60ZT4
Manufacturer Part Number
STB10NK60ZT4
Description
MOSFET N-CH 600V 10A D2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB10NK60ZT4.pdf
(19 pages)
Specifications of STB10NK60ZT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
1370pF @ 25V
Power - Max
115W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
650mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.75 Ohms
Forward Transconductance Gfs (max / Min)
7.8 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
115 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6544-2
STB10NK60ZT4
STB10NK60ZT4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB10NK60ZT4
Manufacturer:
ST
Quantity:
12 500
Electrical ratings
4/19
Table 4.
Symbol
E
E
I
AR
AS
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj=25 °C, I
Repetitive avalanche energy
(pulse width limited by Tj max)
Avalanche characteristics
D
Parameter
=I
AR
, V
DD
= 50 V)
STB10NK60Z, STP10NK60Z, STW10NK60Z
Max value
300
3.5
9
Unit
mJ
mJ
A