STB10NK60ZT4 STMicroelectronics, STB10NK60ZT4 Datasheet - Page 6

• Manufacturer Part Number: STB10NK60ZT4
• Description: MOSFET N-CH 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB10NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1370pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 650mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 7.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6544-2; STB10NK60ZT4

Electrical characteristics
6/19
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2.
Table 9.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
d(on)
d(off)
RRM
GSO
I
SD
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
I
I
V
Igs=± 1 mA (open drain)
V
R
(see Figure 19)
V
R
(see Figure 19)
SD
SD
DD
DD
DD
G
G
=10 A, V
=8 A, di/dt = 100 A/µs,
=4.7 Ω, V
=4.7 Ω, V
=40 V, Tj=150 °C
=300 V, I
=300 V, I
Test conditions
Test conditions
Test conditions
STB10NK60Z, STP10NK60Z, STW10NK60Z
GS
GS
GS
D
D
=0
=4 A,
=4 A,
=10 V
=10 V
Min.
Min.
Min
30
Typ. Max. Unit
Typ.
570
4.3
Typ
15
20
20
55
30
Max Unit
Max Unit
1.6
10
36
µC
ns
ns
ns
ns
ns
A
A
V
A
V