STB50NF25 STMicroelectronics, STB50NF25 Datasheet - Page 10

• Manufacturer Part Number: STB50NF25
• Description: MOSFET N-CH 250V 45A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB50NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 69 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 2670pF @ 25V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.069 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7949-2; STB50NF25

Package mechanical data
10/14
Dim
L20
L30
∅P
D1
H1
b1
e1
L1
J1
A
D
E
Q
b
e
F
L
c
15.25
4.40
0.61
1.14
0.49
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
TO-220 mechanical data
16.40
28.90
1.27
mm
Typ
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.393
0.094
0.173
0.024
0.044
0.019
0.094
0.194
0.048
0.244
0.511
0.137
0.147
0.104
Min
0.6
STB50NF25 - STP50NF25
0.050
0.645
1.137
inch
Typ
0.181
0.034
0.066
0.027
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Max
0.62