STB50NF25 STMicroelectronics, STB50NF25 Datasheet - Page 3

• Manufacturer Part Number: STB50NF25
• Description: MOSFET N-CH 250V 45A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB50NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 69 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 68.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 2670pF @ 25V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.069 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 55mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7949-2; STB50NF25

STB50NF25 - STP50NF25
1
Electrical ratings
Table 2.
1. Value limited by wire bonding
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
1. Pulse width limited by Tjmax
2. Starting T
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt
E
I
I
SD
DM
P
AR
I
I
V
V
AS
T
D
D
TOT
T
T
GS
DS
stg
(1)
(1)
l
j
(1)
≤ 45 A, di/dt ≤ 200 A/µs, V
(2)
(2)
(3)
J
= 25 °C, I
Absolute maximum ratings
Thermal data
Avalanche data
Thermal resistance junction-case max
Thermal resistance junction-amb max
Maximum lead temperature for soldering purpose
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
D
= I
AR
, V
DD
DD
= 50 V
Parameter
Parameter
Parameter
= 80% V
C
= 25 °C
(BR)DSS
C
C
= 25 °C
= 100 °C
-55 to 150
Value
Value
Value
1.28
0.78
62.5
250
±20
180
160
300
160
45
28
10
32
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
A
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