STB21NM60N STMicroelectronics, STB21NM60N Datasheet - Page 17

• Manufacturer Part Number: STB21NM60N
• Description: MOSFET N-CH 600V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB21NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 50V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5002-2

STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
6
Revision history
Table 8.
07-Nov-2005
29-Nov-2005
19-Feb-2008
11-Jan-2007
19-Jan-2007
19-Oct-2005
27-Apr-2007
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Document revision history
Revision
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First release.
Modified curves
Complete version
The document has been reformatted
Typo mistake on
Modified curves
Figure 13
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Figure 12
Figure 11
Table 6
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Changes
Figure 15
Revision history
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